document number 2660 issue 2 2N6299SMD 2N6299SMD05 2n6301smd 2n6301smd05 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. v ceo collector ? emitter voltage v cbo collector ? base voltage v ebo emitter ? base voltage i c continuous collector current peak i b base current p d total dissipation @ t c = 25c derate above 25c t stg , t j operating and storage junction temperature range 80v 80v 5v 8a 16a 120ma 75w 0.428w/c ?65 to +200c mechanical data dimensions in mm (inches) complementary silicon power transistors designed for general purpose amplifier and low frequency switching applications. absolute maximum ratings (t case = 25c unless otherwise stated) features ? high dc current gain monolithic construction with built-in base?emitter shunt resistors
smd1 (to-276ab) pad 1 ? base pad 2 ? collector pad 3 ? emitter smd05 (to-276aa) pad 1 ? base pad 2 ? collector pad 3 ? emitter 2N6299SMD - pnp transistor 2n6301smd - npn transistor
document number 2660 issue 2 2N6299SMD 2N6299SMD05 2n6301smd 2n6301smd05 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. electrical characteristics (t case = 25c unless otherwise stated) collector ? emitter sustaining voltage * collector cut?off current collector cut?off current emitter cut?off current dc current gain* collector ? emitter saturation voltage* base ? emitter saturation voltage* base ? emitter on voltage* output capacitance magnitude of common emitter small signal short circuit current transfer ratio small signal current gain* 80 0.5 0.5 5.0 2 750 18000 100 2.0 3.0 4.0 2.8 200 25 350 300 v ma ma ma ? v v v pf ? ? v ceo(sus) i ceo i cex i ebo h fe v ce(sat) v be(sat) v be(on) c ob ? h fe ? h fe notes dynamic characteristics on characteristics off characteristics parameter test conditions min. typ. max. unit * pulse test: t p = 300s , duty cycle = 2% i c = 100ma i b = 0 v ce = 40v i b = 0 v ce = rated v cb v be(off) = 1.5v t c = 150c v be = 5v i c = 0 v ce = 3v i c = 4a v ce = 3v i c = 8a i c = 4a i b = 16ma i c = 8a i b = 80ma i c = 8a i b = 80ma v ce = 3v i c = 4a v cb = 10v i e = 0 f = 0.1mhz v ce = 3v i c = 3a f = 1mhz v ce = 3v i c = 3a f = 1khz
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